Old Web
English
Sign In
Acemap
>
Paper
>
Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si
Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si
2004
Kouichi Hirata
Yoshinori Kobayashi
Keywords:
Radiochemistry
Ion implantation
Composite material
Ion
Materials science
incident energy
Atomic physics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
4
References
0
Citations
NaN
KQI
[]