Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin films

Lanthanum has been identified as a promising dopant to achieve ferroelectricity in HfO2 thin films in recent theoretical and experimental studies. In this work, the pyroelectric properties of 10 nm thick polycrystalline La-doped HfO2 layers manufactured by thermal atomic layer deposition are assessed employing a sinusoidal temperature profile. Compared to Si doping, La offers a broader dopant range in which ferroelectric behavior is obtained, making the material interesting for large-scale integration and deposition on area-enhanced substrates. Pyroelectric coefficients of up to −80 μC/m2 K are obtained using an optimized stoichiometry, which is comparable to earlier measurements with Si-doped HfO2 samples. Phase-sensitive evaluation of the measured current confirms the pyroelectric origin with minimal spurious contributions. The results are discussed with respect to the ferroelectric switching behavior, which is analyzed employing first-order reversal curve measurements. It is found that there is no simp...