Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon.

This work is devoted to the characterization of the Si:H system obtained by high-fluence, low-energy, hydrogen implantation into single-crystal silicon. The implanted hydrogen profile and the ones resulting after thermal annealing in the range 100-800 o C are detected by secondary-ion mass spectrometry and elastic-recoil detection analysis. The displacement field in the crystal, measured by channeling Rutherford-backscattering spectrometry, is found to depend on the direct radiation damage, the extended defects formed after ion implantation (revealed by transmission electron microscopy), and the implanted species