Effect of silicon and niobium on oxidation resistance of TiAl intermetallics
1992
Abstract The high temperature air oxidation of titanium aluminide intermetallics with small additions of silicon, niobium and a combination of silicon and niobium was studied in a temperature range between 973 and 1173 K. There was less weight gain when silicon and niobium were added individually. The combination of silicon and niobium resulted in much better oxidation resistance than the individual element additions. The effects of silicon and niobium on TiAl oxidation were different. For example, TiAlSi showed a parabolic weight gain whereas TiAlNb did not. The surface oxide scale was basically composed of three layers, i.e. TiO, Al 2 O 3 and TiO 2 + Al 2 O 3 from the surface inward. SiO 2 was detected in the TiO 2 + Al 2 O 3 layer. Niobium strengthened the tendency to form Al 2 O 3 in the early stage of oxidation, resulting in the formation of a continuous Al 2 O 3 layer and a dense TiO 2 + Al 2 O 3 layer.
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