Advanced Electrical Characterisation of High Voltage 4H-SiC PiN Diodes

This paper reports the design, the processing, the static characterisation, the switching behaviour and the high current stress test of 10 kV aimed 4H-SiC bipolar diodes. The actual breakdown voltage of the selected devices is between 7 kV and 8 kV. The switching characterisations show a good behaviour with a trr of only 90 ns. No degradation was observed after the application of 10 000 high current pulses during the stress tests.