Selective area growth engineering for 80nm spectral range AlGaInAs 10Gbit/s remote amplified modulator
2008
A selective area growth model was used to engineer a remote amplified modulator with an AlGaInAs multi-quantum well active layer. The selective mask layout was designed to fulfill special component requirements including +35 nm SOA gap detuning and low polarization dependence. The fabricated reflective device exhibits 10 dB maximum insertion gain and operates at 10 Gbit/s over 80 nm spectral range.
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