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Strain enhanced FUSI/HfSiON Technology with optimized CMOS Process Window
Strain enhanced FUSI/HfSiON Technology with optimized CMOS Process Window
2007
A. Veioso
Peter Verheyen
Rita Vos
S. Brus
Shunji Ito
R. Mitsuhashi
Vasile Paraschiv
X. Shi
B. Onsia
Sophia Arnauts
Roger Loo
Anne Lauwers
Thierry Conard
J. F. De Marneffe
Dries R. Goossens
D. Baute
Sabrina Locorotondo
Thomas Chiarella
Christoph Kerner
Christa Vrancken
Steven B. Mertens
Barry OSullivan
HongYu Yu
Shou-Zen Chang
M. Niwa
Jorge Kittl
Philippe Absil
Malgorzata Jurczak
Thomas Y. Hoffmann
Serge Biesemans
Keywords:
Strain (chemistry)
Process window
CMOS
Performance improvement
Optoelectronics
Materials science
Correction
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