Terahertz emission spectroscopy of InAs nanowires

We measured terahertz (THz) emission from the vertically aligned indium arsenide (InAs) nanowires using THz time-domain spectroscopy. The photoexcited InAs nanowires were grown by metalorganic chemical vapor deposition on type silicon substrate. Experimental results shows that THz emission mechanism of InAs nanowires are very different from that of bulk InAs substrates.