Range profiles of 10 to 390 keV ions (29 ≦ Z1 ≦ 83) implanted into amorphous silicon☆

Abstract Our recent range profile measurements for a series of elements (29 ≦ Z 1 ≦ 83) implanted from 10 to 390 keV in amorphous silicon are compared with the Biersack-Ziegler (BZ) calculations. While the theoretical predictions are in good agreement with the experimental ranges at implantation energies larger than 70 keV, the results for several elements at lower energies are strongly underestimated by the calculations. These differences are ascribed to the Z 1 -range oscillation effect. In the present work we perform range calculations simulating a decrease of the elastic interaction at low energies. This approach is phenomenologically related to modifications of the charge distribution during the collisions. The results obtained show a better agreement between the calculations and the great majority of the existing low energy experimental ranges in silicon substrates.