Semiconductor device with overload current capacity

The semiconductor device (1), comprising: - a semiconductor region (11), wherein the semiconductor region (11) having carriers of a first conductivity type; - a transistor cell included in the semiconductor region (11) (1-1); - included into the transistor cell (1-1) semiconductor channel region (111), wherein the semiconductor channel region (111) having a first doping concentration of charge carriers of a second conductivity type that is complementary to the first conductivity type, and wherein a junction between the semiconductor channel region (111) and the semiconductor region (11) forming a first pn junction (11-1); - a in the semiconductor region (11) included, from semiconductor channel region (111) different semiconductor subsidiary region (112), said semiconductor auxiliary area (112) having a second doping concentration of charge carriers of the second conductivity type, said second dopant concentration is at least 30% higher than the first doping concentration, wherein a transition between the semiconductor subsidiary region (112) and the semiconductor region (11) forms a second pn junction (11-2), said second pn junction (11-2) is equal to deep or deeper in the semiconductor region (11) is arranged as the first pn junction (11-1), said semiconductor auxiliary area (112) is located closest to the semiconductor channel region (111) compared to any other semiconductor region of the semiconductor device (1), comprising the charge carriers of the second conductivity type and the another pn junction to the semiconductor region (11), and - diode cell contained one in the semiconductor region (11) (1-2), wherein the diode cell (1-2) comprises a semiconductor anode region (113), and wherein the semiconductor anode region (113) having a third doping concentration of charge carriers of the second conductivity type and said second doping concentration is higher than the third doping concentration.