Conducted EMI Modeling and Evaluation of Si and SiC devices on Aerospace Machine

Aerospace applications demand power electronics with high power density and high reliability. Many strategies exist to improve power density and researchers are examining new power devices as a tool to achieve this goal. Commercially available silicon carbide (SiC) power devices have Figures of Merit significantly higher than silicon (Si) components. Their smaller on-resistances facilitate lower conduction losses, and their small parasitic capacitances result in reduced switching loss and increased transient switching speed. These advantages, when applied strategically, can increase power density. The reliability of SiC power devices has also improved during the last decade, but questions remain about conducted and radiated emissions that result from SiC-based hardware due to their high switching speed. This research models the conducted electromagnetic interference (EMI) of a three-phase inverter and electric machine. Experimental results confirm the validity of the model under DO-160.