Low Frequency Noise Evolution of AlGaN/GaN HEMT after 2000 hours of HTRB and HTO life tests

The low frequency drain noise of High Electron Mobility Transistor based on AlGaN/GaN heterostructure on SiC substrate is analysed before and after 2000 hours of DC life tests. The life tests have weakly affected the drain current noise of this technology. The experimental results show that the degradation should not be located in the channel.