Ferromagnetism in GaN doped with transition metals and rare-earth elements: A review

Abstract Gallium nitride is a wide band gap semiconductor material that has drawn significant interest due to its potential applications in opto-electronics and spin-tronics devices that can be operated above room temperature. First principle calculations by density functional theory have a key role in the field of materials science research. Theoretical findings on gallium nitride revealed that it shows ferromagnetic behavior doped by transition metals (i.e. 3d and 4d metals) and rare-earth elements. Ferromagnetism developed in gallium nitride by doping 3d (Ti, Cr, Mn, Fe, Co, Ni, and Cu), 4d metals (Ag and Pd), and rare-earth elements (Eu, Gd, and Ce) is discussed in this review. Effect of concentration on magnetic moment is also discussed. The origin of magnetism and exchange interaction that play a vital role in ferromagnetic and anti-ferromagnetic behavior is also explained. P-d exchange mechanism, s-d hybridization, and exchange mechanism are also explained in detail.