Vertical heterojunction of MoS 2 and WSe 2

The development of experimental methods 1 to create stacked structures of layered 2D materials with atomic-plane precision provides opportunities to study a variety of van der Waals heterojunctions that is difficult to fabricate with traditional growth methods. Here, we report the vertical integration of two 2D TMD materials, MoS 2 and WSe 2 , to form van der Waals heterojunction. We show that the electrical properties of the heterojunction are controlled by gate voltage and rectification is observed with forward/reverse current ratio ~ 100.