Towards ultra-low-voltage wideband noise-cancelling LNAs in 28nm FDSOI

Software-defined and reconfigurable radio (SDR) architectures covering bands up to 6-GHz have recently drawn strong research attention for future wireless communications. These radios impose heavy Low Noise Amplifier (LNA) requirements over a wide frequency range. In order to be integrated in complex Systems-on-a-Chip (SoCs), such LNAs should also be implemented in advanced CMOS technologies to follow SoC development trends while benefiting from the high fT and fmax available with technology scaling [1]. In this work, we study the potential of 28nm FDSOI for operating inductorless wideband LNAs at Ultra-Low-Voltage (ULV) through a sizing framework combining extensive design space exploration and small signal modelling.