1T-DRAM at the 22nm technology node and beyond: An alternative to DRAM with high-k storage capacitor

In this work, we demonstrate that the MSDRAM can achieve better performances regarding to the sensing margin compared to programming methods like impact ionization and forward biased junctions. This improvement results mainly from the low current level at 0-state. Indeed, the MSDRAM uses gate capacitive coupling method which allows to reach zero current level. Finally, the band-to-band tunneling used to program the 1-state strongly reduces the power consumption and improves the device reliability. These promising results promote the MSD programming mechanism as a viable solution for low-power single-transistor DRAM memories.