Advanced High Voltage Reverse Conducting RC-IGBT Technology with Low Losses and Robust Switching Performance

In this paper, we report a 3300V RC-IGBT based on an advanced DMOS planar cell concept. In addition to the emitter cell concept, the RC-IGBT incorporates new design features including a robust cellular emitter layout design with dedicated diode cells and a gradual backside collector short layout design for snap-back free IV output characteristics. The design combinations provide very low IGBT mode and diode mode conduction and switching losses along with a wide Safe-Operating-Area (SOA) and high short circuit capability. Furthermore, the diode on-state losses dependency on the applied gate voltage is minimized for applications requiring no special gate control adjustments.