Reactive partially ionized beam deposition of BaTiO3 thin films

A dual‐source reactive partially ionized beam deposition has been employed to deposit thin BaTiO3 films on the Si(100) substrate at room temperature. It is shown that with a small amount (3%) of Ti and oxygen ions in the beam one can dramatically control the electrical properties of the films. From the capacitance versus voltage (C‐V) characteristics, the flatband voltage and the total interface charge density were measured to be 0.3 V and 1×1011/cm2, respectively. These ferroelectric compound oxide thin films with high‐dielectric constant are potentially useful in high density memory applications.