Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
2012
We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (Bpp=12μT) and long spin coherence times (T2=0.7 ms, at temperature T=8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
31
References
41
Citations
NaN
KQI