Nanopattern formation on InP using energetic ions: An overview with various ion beam parameters

Formation of nanopatterns using energetic ion beams has attracted wide interest due to their exotic properties and important applications in numerous fields such as patterning of magnetic materials for memory storage [1, 2], various sensor applications, functionalization of the surfaces for better attachment of bio-molecules [3], SERS based applications using metallic nanoparticles [4] etcetera. There are several reports by different research groups [4, 5] that demonstrate the usefulness of energetic ion beams in terms of enhanced performance of sensor by ion irradiation. Energetic ions play a crucial role in the formation of nanostructured materials. Ions of different energy regimes have different roles to play in the growth of nanostructures. Low energy ions of a few ~ keVs, have been used for growth thin films containing nanoparticles. Ions with a few ~10-100s of keVs, are used for growth of nanopatterns (nanodots or nanoripples) through self-assembly. Such pattern formation depends upon various ion beam parameters such as angle of incidence of the beam, ion fluence, ion energy and target material properties etc. By tuning the ion beam parameters, one can get the desired shape and size of the nanopatterns on wide variety of substrates. In this paper, we have tried to show the effect of the above-mentioned ion beam parameters especially, on InP and Ge, from our earlier studies [6, 7]. Further, the correlations have been made where such patterns have been used for various applications.