Core-Shell Nanowire Junctionless Accumalation Mode Field-Effect Transistor (CSN-JAM-FET) for High Frequency Applications - Analytical Study

Here, an analytical model has been proposed for Core-Shell-Nanowire-Junctionless-Accumulation-Mode- Field-Effect Transistor (CSN-JAM-FET) for High Frequency Applications. CSN-JAM-FET has been contrasted with Nanowire- Junctionless- Accumulation- Mode- Field-Effect Transistor (NJAM-FET) under the similar device conditions by keeping the threshold voltage same for both. It is so found that CSN-JAM-FET shows much higher drain current (Ids), transconductance (gm), output conductance (gd), Ion/Ioff ratio, Subthreshold Slope (SS) and cut off frequency (fT) because of the inherent property of core shell architecture to elevate the gate domination over the channel. The analytical results have also been modelled for CSN-JAM-FET by finding a result of the Two-Dimensional Poisson equation in accordance with the boundary conditions. The analytical results are much in coherence with the results obtained from the simulator.