Modeling the Technology and Bias Dependence of the Overlap Resistance in a MOS Transistor

A mathematical model to approximate the behavior of the overlap-resistance in the source and drain of a MOS Transistor (MOST), is introduced. The proposed model is based on the physics of semiconductors from which a mathematical function is generated by fltting numerical data computed from its associated equations. Based on this function, a small-signal model is proposed, where the technology and bias dependence of the overlap resistance is included.