Impact of the Inhomogenous Structure of Polysilicon TFT's Active Layer on the Electrostatic Potential Distribution

Recently polycrystalline silicon (pc-Si) thin film transistors (TFT’s) have emerged as the devices of choice for many applications. The TFTs made of a thin un-doped polycrystalline silicon film deposited on a glass substrate by the Low Pressure Chemical Vapor Deposition technique LPCVD have limits in the technological process to the temperature