880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates

In this letter, we report a high-voltage metal-insulator-semiconductor gate trench current aperture vertical electron transistor using metal–organic chemical vapor deposition regrown AlGaN/GaN as the channel and in-situ Si 3 N 4 as the gate dielectric. The device had a high breakdown voltage of 880 V and a low $\text{R}_{\mathrm {on,sp}}$ of $2.7~\text {m}\Omega \cdot \text {cm}^{2}$ . A low hysteresis of ~0.1 V was observed due to the high quality of the in situ Si 3 N 4 .