Old Web
English
Sign In
Acemap
>
Paper
>
Ab Initio Calculation of the Interaction of an Edge Dislocation with Transition Metal Impurity Atoms in Silicon
Ab Initio Calculation of the Interaction of an Edge Dislocation with Transition Metal Impurity Atoms in Silicon
2020
T. V. Gorkavenko
, Volodymyrska st. , Kyiv, Ukraine
I. V. Plyushchay
O. I. Plyushchay
Keywords:
Dislocation
Impurity
Ab initio
Silicon
Materials science
Transition metal
Atom
Condensed matter physics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]