Admittance spectroscopy as a method for investigating relaxation processes in quantum-sized heterostructures

The wide possibilities of admittance spectroscopy as a tool for the effective study of relaxation processes in quantum-sized heterostructures are demonstrated by the example of comprehensive investigations of InGaN/GaN semiconductor heterostructures with multiple quantum wells. The nature of emitting centers in InGaN/GaN nanoheterostructures was determined from the character of charge carrier relaxation, as revealed from the temperature spectra of conductance.