A 54.2-dB Current Gain Dynamic Range, 1.78-GHz Gain-Bandwidth Product CMOS VCCA 2

2019 
A voltage-controlled current amplifier/attenuator in a standard 0.35- ${\mu }\text{m}$ CMOS technology is presented. It is based on the resistive mirror method, using non-saturated MOSFETs. An open-loop design with no compensation capacitors provides a high stability and a small occupied chip area of 0.0126 mm 2 . A current gain dynamic range of 513 (54.2 dB), a gain-bandwidth product of 1.78 GHz at the largest current gain of 35.9 dB, and a maximum power consumption of 250 ${\mu }\text{W}$ with a single supply voltage of 1.3 V are achieved. In addition, an AC current source has been designed, integrated on the same chip, and used as the input of the proposed voltage-controlled amplifier/attenuator.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    10
    References
    2
    Citations
    NaN
    KQI
    []