Carbon effect on strain compensation in Si1-x-yGexCy films epitaxially grown on Si(100)

Abstract Carbon effect on strain compensation in Si 1− x − y Ge x C y films epitaxially grown on Si(100) at 500 °C has been investigated using an ultraclean hot-wall low-pressure chemical vapor deposition. The introduction of C into thin strained Si 1− x Ge x films reduces the average lattice constant. On the other hand, results of the Raman scattering measurement show that C incorporation scarcely affects on local strain of Si–Si, Si–Ge and Ge–Ge bonds. The critical thickness at which the Raman shift peak begins to be decreased tends to become larger for the higher C fraction. It is considered that the C introduction effectively increases the critical thickness by relieving the overall strain.