The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region

We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al 0.2 Ga 0.8 N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.