SEU in SRAMs due to 2.5 MeV, 14 MeV and reactor neutrons

Experimental results of neutron-induced single event upset (SEU) in SRAM devices were introduced. The SEU sensitivity of SRAM devices with eight distinct technology nodes was studied at 14 MeV neutron, 2.5 MeV neutron and reactor neutron irradiation environments respectively. The experimental results indicate that neutron-induced SEU cross-section in SRAM devices is strongly dependent with the technology nodes, the incident neutron energy and the power supply voltage of the devices. However, both the neutron fluence rate and the byte pattern in SRAM devices have little impact on the neutron-induced SEU cross-section.