Weak melt flow effect on dopant striations in Te-doped GaSb crystal growth

Abstract To investigate a weak melt flow effect on the segregation process, the axial heat processing crystal growth technique was used at conditions of low-frequency temperature fluctuations. This technique was applied to Te-doped GaSb crystal growth. A two-dimensional transient numerical model based on the “KARMA1” computer code was developed to investigate fluid flow, solid/liquid interface shape and dopant concentration in the grown crystal. The model incorporated real boundary conditions measured during the experiment. The predicted evolution of the solid/liquid interface shape and the concentration distribution agreed well with the experiment, including the formation of growth striations. This gave the possibility to determine conditions of dopant striation appearance.