SIMS analysis of HfSiO(N) thin films
2006
Abstract We have measured the N profile in HfSiON film using Cs primary ions under various conditions and observed an enhancement of the N ion signal at the surface and interface between HfSiON/Si. We have found that the enhancement is alleviated by glancing angle Cs primary ions and O 2 flooding. Our backside SIMS measurements show that Hf is diffused into the Si substrate from HfSiON film during the thermal processes.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
3
References
4
Citations
NaN
KQI