Electrical Characterization of $\hbox{ZrO}_{2}/\hbox{Si}$ Interface Properties in MOSFETs With $\hbox{ZrO}_{2}$ Gate Dielectrics

MOSFETs incorporating ZrO 2 gate dielectrics were fabricated. The I DS -V DS , I DS -V GS , and gated diode characteristics were analyzed to investigate the ZrO 2 /Si interface properties. The interface trap density (D it ) was determined to be about 7.4times10 12 cm -2 middoteV -1 using subthreshold swing measurement. The surface-recombination velocity (s 0 ) and the minority carrier lifetime in the field-induced depletion region (tau 0,FIJ ) measured from the gated diodes were about 3.5times10 3 cm/s and 2.6times10 -6 s, respectively. The effective capture cross section of surface state (sigma s ) was determined to be about 5.8times10 -16 cm 2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO 2 gate oxides was also made