OPTIMAL DEPOSITION GEOMETRY AND SIMULATION OF PE-CVD APPARATUS BASED ON A POROUS MEDIA

The numerous technical applications in deposit metal plates with new materials like SiC and T iC has an advantage to overcome the leaking corrosive behavior and have additional a good electrical behavior. We are motived to save expensive physical experiments with an underlying mathematical model, that predict their parameters in cheaper computer experiments. Here we present an application of a porous media to model a homogenized deposition with a parallel plate PE-CVD apparatus. A main problem is to optimize the deposition rates of the target geometry. Here we propose a rotating source that covers all the deposition areas of the target. For the model, the species of the deposition are inflowing precursor gases that are transported by the flow field through the porous media given as an Argon plasma. We simulate the transport to the apparatus geometry respecting the flux field in the different permeable layers, that presents the electric field. To derive a mathematical model, we deal with a model for the transport and kinetics of the different species. We verify the numerical model by physical experiments and approximate the parameters of the numerical model. We introduce a multi regression method to switch between the physical and mathematical parameters. We present results of some numerical simulations and help to foresee some effects to find on optimal deposition process.