Record fT, fmax, and GHz amplification in 2dimensional CVD MoS2 embedded gate fets

We report on chemical vapor deposited (CVD) M0S2 radio frequency (RF) transistors with a record fT of 20 GHz and fmax of 11.4 GHz, and the largest high-field saturation velocity, Vsat = 1.88 × 106 cm/s, in MoS2 reported so far. The gate-first approach, facilitated by cm-scale CVD MoS2, offers enhancement mode operation, Ion/Ioff ratio of 108, and the highest reported transconductance (gm) of 70 μS/μm. The intrinsic ft (fmax) obtained here is 3X (2X) greater than previously reported top-gated CVD MoS2 RF FETs. With as-measured S-parameters, we demonstrate the design of a GHz MoS2-based RF amplifier. This amplifier has gain greater than 15 dB at 1.2 GHz, input return loss > 10 dB, bandwidth > 200 MHz, and DC power consumption of ∼10 mW.