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Growth of high quality Ge-on-Si layer by using an ultra-thin LT-Si buffer in RPCVD
Growth of high quality Ge-on-Si layer by using an ultra-thin LT-Si buffer in RPCVD
2019
J. Zhang
X Chen
J.A. Wang
G. B. Chen
Z H Tang
K. Z. Tan
W. Cui
Keywords:
Materials science
Optoelectronics
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