A new compact model for the analysis of the anomalies in I-V characteristics of Schottky diodes
1998
A new enhanced analytical model including quantum-mechanical effects which reflects the internal behaviour of Schottky structures more adequately and corresponds to experimental characteristics is presented. The contribution of surface generation — recombination current to the total current through the interface is significant, particularly for low forward applied voltages and low temperatures and cannot be neglected in the model for parameters extraction.
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