Insulated gate bipolar transistor with a thermistor with a negative temperature coefficient

2014 
An embodiment of an IGBT (100) comprises an emitter terminal (E) at a first surface (103) of a semiconductor body (105). The IGBT (100) further includes a collector terminal (C) on a second surface (107) of the semiconductor body (105). A first zone (108) of a first conductivity type in the semiconductor body (105) between the first and second surfaces (103, 107). A collector injection structure (110) adjacent to the second surface (107), wherein the collector injection structure (110) is of a second conductivity type and a first part (1101) and a second portion (1102) at a first lateral distance (d1) from each other, having , The IGBT (100) further comprises a thermistor having a negative temperature coefficient adjacent to the first zone (108) in an area (112) between the first and second portions (1101, 1102).
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