Properties of Dilute-Nitride-Antimonide Materials Grown by Metalorganic Vapor Phase Epitaxy (MOVPE) for Solar Cell Application
2013
Bulk dilute-nitride-antimonide materials are grown by MOVPE nominally lattice-matched to the GaAs substrate with bandgap energies in the 1-1.25eV range. Single-junction solar cells demonstrate a peak efficiency of 7.22% with high open circuit voltages (Voc=0.72V).
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
8
References
0
Citations
NaN
KQI