Properties of Dilute-Nitride-Antimonide Materials Grown by Metalorganic Vapor Phase Epitaxy (MOVPE) for Solar Cell Application

Luke J. Mawst,Tae-Wan Kim,Toby J. Garrod,T. F. Kuech,Kangho Kim,Jaejin Lee,S. D. LaLumondiere,Yongkun Sin,William T. Lotshaw,Steven C. Moss,Rao Tatavarti

Properties of Dilute-Nitride-Antimonide Materials Grown by Metalorganic Vapor Phase Epitaxy (MOVPE) for Solar Cell Application

2013

Luke J. Mawst
Tae-Wan Kim
Toby J. Garrod
T. F. Kuech
Kangho Kim
Jaejin Lee
S. D. LaLumondiere
Yongkun Sin
William T. Lotshaw
Steven C. Moss
Rao Tatavarti

Bulk dilute-nitride-antimonide materials are grown by MOVPE nominally lattice-matched to the GaAs substrate with bandgap energies in the 1-1.25eV range. Single-junction solar cells demonstrate a peak efficiency of 7.22% with high open circuit voltages (Voc=0.72V).

Keywords:

Antimonide
Metalorganic vapour phase epitaxy
Band gap
Epitaxy
Solar energy
Analytical chemistry
Semiconductor
Nitride
Solar cell
Optoelectronics
Materials science
Quantum efficiency
Open-circuit voltage
Solar cell efficiency

Correction
Source
Cite
Save
Machine Reading By IdeaReader

References

Citations