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IVA-5 ion implanted GaAs p-channel MESFET with Schottky-barrier height enhancement
IVA-5 ion implanted GaAs p-channel MESFET with Schottky-barrier height enhancement
1986
G.Y. Lee
Steven M. Baier
H.K. Chung
B.J. Fure
N.C. Cirillo
Keywords:
MESFET
Schottky barrier
Electronic engineering
Ion implantation
Gallium arsenide
Analytical chemistry
Ion
Transconductance
Physics
Communication channel
mesfet circuits
p channel
Fabrication
Correction
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