Nonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays

The effect of irradiation with soft X-rays produced by a laser plasma source equipped with an X-ray concentrator on the properties of the CdHgTe semiconductor are investigated. For this purpose, the mass concentration of atoms in the near-surface layer of the material is measured. It is demonstrated that the action of soft X-ray radiation leads to change in the solid-solution composition at the surface via a nonthermal mechanism and generates surface defects.