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50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics
50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics
2001
J. M. Hergenrother
G. D. Wilk
T. Nigam
F. P. Klemens
D. Monroe
P. J. Silverman
T. W. Sorsch
B. Busch
M. L. Green
M. R. Baker
T. Boone
M.K. Bude
N. A. Ciampa
E. J. Ferry
A. T. Fiory
S. J. Hillenius
D. C. Jacobson
R. W. Johnson
P. Kalavade
R. C. Keller
C. A. King
A. Kornblit
H.W. Krautter
J. T C Lee
W. Mansfield
J. F. Miner
M. D. Morris
Sang Hyun Oh
J. M. Rosamilia
B. J. Sapjeta
K. Short
K. Steiner
D.A. Muller
Paul M. Voyles
J. L. Grazul
E. J. Shero
M. E. Givens
C. Pomarede
M. Mazanec
C. Werkhoven
Keywords:
Electronic engineering
Dielectric
Optoelectronics
Physics
Current density
Equivalent oxide thickness
Correction
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