Development of the negative-tone molecular resists for EB/EUVL having high EUV absorption capacity and molecular design method

In this paper, we designed the synthesis of negative-type molecular resist materials for EB and EUVL exposure tools, and their properties were examined. The resist materials for EUVL have been required showing higher sensitivity for high throughput in the lithographic process, and expecting lower shot noise to improve a roughness. In EUVL process, the resist materials must be ionized by absorbing EUV to emit more secondary electrons. The EUV absorption of the synthesized resist materials was measured using their thin films on the silicon wafer, and it was observed that the ratio of EUV absorption of the synthesized resist was higher than in the comparison of that of PHS as a reference., i.e., 2.4 times higher absorption was shown. Furthermore, we examined the relationship between the ratios of EUV absorptions and functional groups of the resist materials. As the result, the sensitivity of resist materials under EUV exposure tool was consistent with their structures.