1.3-/spl mu/m InGaAs vertical-cavity surface-emitting lasers

We report on the fabrication and performance of N-free InGaAs/GaAs 1.3-mum range vertical-cavity surface-emitting lasers (VCSELs). Using optimized quantum-well (QW) growth conditions in combination with negative gain-cavity tuning, high-performance VCSELs with emission wavelength up to 1300 nm are realized. The performance figures include mA-range threshold currents, mW-range singlemode output power, continuous-wave operation up to 140degC and 10 Gbit/s data transmission