4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers

High-voltage (1600 V) diodes based on epitaxial 4H-SiC p++–p+–n0–n+ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4H-SiC of p type is experimentally estimated for the first time: v sp = 3 × 106 cm/s.