α Irradiation Response on the Electronic Transport Properties of p-B12P2

B $$_{12}$$ P $$_{2}$$ , a wide bandgap semiconductor, has been previously reported to self-heal from high-energy electron bombardment as determined from transmission electron microscopy. However, the effect of irradiation on the electronic transport properties of B $$_{12}$$ P $$_{2}$$ has not been studied. We report electrical transport measurements on B $$_{12}$$ P $$_{2}$$ after $$\alpha $$ irradiation. The temperature-dependent Hall effect was measured on p-type B $$_{12}$$ P $$_{2}$$ after successive $$\alpha $$ irradiation from $$^{210}$$ Po over a fluence range of $$1\times \,10^{11}{-}1\times 10^{13}\,\alpha /\hbox {cm}^{2}$$ to test for self-healing of B $$_{12}$$ P $$_{2}$$ to $$\alpha $$ bombardment. Prior to irradiation, B $$_{12}$$ P $$_{2}$$ displayed electrical transport characteristics of both hopping and impurity/defect band conduction due to background impurities and growth-induced defects. Fluences of $$5\times 10^{12}\,\alpha /\hbox {cm}^{2}$$ or greater caused a decrease in the hole mobility and an increase in defect band conduction, suggesting defect accumulation in B $$_{12}$$ P $$_{2}$$ .