Flexible In 2 O 3 Nanowire Transistors on Paper Substrates

Flexible In 2 O 3 nanowire transistors gated by microporous SiO 2 -based solid electrolytes are fabricated on paper substrates at room temperature. Low-voltage (1.0 V) operation of these devices is realized owing to the large electric-double-layer capacitance of (1.73 ${\mu }\text{F}$ /cm 2 at 20 Hz) of the microporous SiO 2 solid electrolytes, which were deposited at room temperature. The subthreshold swing, current on/off ratio, and field-effect mobility of the paper-based nanowire transistors are estimated to be 74 mV/decade, $1.7\times 10^{6}$ , and 218.3 cm 2 / $\text{V}\cdot \text{s}$ , respectively. These low-voltage paper-based nanowire transistors show promise for use in portable flexible paper electronics and low-cost portable sensors.