Problems related to the formation of lateral p–n junctions on channeled substrate (100) GaAs for lasers

We shall describe the main steps required for molecular‐beam epitaxial (MBE) growth on structured GaAs substrates for lasers, in particular, a reproducible etching process develolped for GaAs which yields well‐defined and controllable tilt angles. The main parameters determining morphology and doping behavior on a facet are tilt angle Θ, substrate temperature, and the V:III ratio. The limiting values of these three parameters for obtaining good quality n‐ and p‐type films, using Si as a dopant, will be determined. We conclude that a (311A) facet is best suited to obtain plane selective doping without generating a detrimental (111A) plane. As a result of this study, lateral p–n junctions with light emission will be demonstrated showing promise for new device structures such as lasers.