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Acemap > Paper > Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr 0.85 Si 0.15 O 2 Gate Dielectric

Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr 0.85 Si 0.15 O 2 Gate Dielectric

2018 
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