A 120-mW, Q-band InP HBT Power Amplifier with 46% Peak PAE

We present a record collector efficiency (54%) and PAE (46%) at 47 GHz for a 250-nm InP HBT power amplifier (PA). Reactively tuned transistor cells using a multi-section hybrid distributed-lumped matching network realize high PAE. The reported PA delivers up to 120 mW at 47 GHz while operating from a 2.75 V power supply. The measured PAE is the highest reported at 47 GHz.